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| Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors MCR 100- 6, - 8 FEATURES Current-IGT: ITRMS: VDRM: TO-92 Silicon Planar PNPN Thyristor 1. KATHODE 2. GATE 200 0.8 MCR100-6: MCR100-8: 3. ANODE A A 400 600 V V 123 Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter On state voltage * Gate trigger voltage Peak Repetitive forward and reverse blocking voltage MCR100-6 MCR100-8 Peak forward or reverse blocking Current Holding current Symbol VTM VGT VDRM AND unless otherwise specified) Test conditions ITM=1A VAK=7V MIN MAX 1.7 0.8 UNIT V V IDRM= 10 A ,VMAX=1010 V 400 600 V VRRM IDRM IRRM IH A2 A1 VAK= Rated VDRM or VRRM IHL= 20 mA , Av = 7 V 10 5 5 15 15 30 A mA A A Gate trigger current IGT A VAK=7V 30 80 A B 80 200 A * Forward current applied for 1 ms maximum duration, duty cycle1%. Typical Characteristics MCR100-6,-8 |
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